STD35NF06L Series

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package

Catalog

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Supplier Device Package	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
STMicroelectronics STD35NF06LT4	33 nC	16 V	DPAK	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	N-Channel	1700 pF	17 mOhm	80 W	35 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	60 V	4.5 V 10 V
STMicroelectronics STD35NF3LLT4	17 nC	16 V	DPAK	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	N-Channel	800 pF			35 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	30 V	4.5 V 10 V	50 W	19.5 mOhm
STMicroelectronics STD35N3LH5	6 nC	20 V	DPAK	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	2.5 V	N-Channel	725 pF			35 A	MOSFET (Metal Oxide)	-55 °C	175 ░C	30 V	4.5 V 10 V	35 W	16 mOhm

Catalog

N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a DPAK package

Description

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.