Technical Specifications
Parameters and characteristics for this part
| Specification | STD35NF06LT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 35 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 33 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 80 W |
| Rds On (Max) @ Id, Vgs [Max] | 17 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD35NF06L Series
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources
Datasheet
DatasheetTN1224
Technical Notes & ArticlesFlyers (5 of 6)
TN1225
Technical Notes & ArticlesFlyers (5 of 6)
Flyers (5 of 6)
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AN4191
Application NotesUM1575
User ManualsFlyers (5 of 6)
AN4337
Application NotesAN1703
Application NotesAN4390
Application NotesAN3267
Application NotesFlyers (5 of 6)
