S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Values | Type | Height [z] | Height [z] | Technology | Mounting Type | Package / Case | ESD Protection | Number of Channels [custom] | Filter Order | Resistance - Channel (Ohms) | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Peripherals | Core Processor | Program Memory Type | Speed | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Core Size | Connectivity | Program Memory Size | Number of I/O | Supplier Device Package | Oscillator Type | Data Converters [custom] | Data Converters [custom] | RAM Size | Grade | Qualification | Utilized IC / Part | Supplied Contents | Board Type | Amplifier Type | Channels per IC | Voltage Dropout (Max) [Max] | Control Features | Voltage - Input (Max) [Max] | Current - Output | Number of Regulators | Current - Supply (Max) [Max] | Output Configuration | Protection Features | Output Type | PSRR [Max] | PSRR [Min] | For Use With/Related Products | Frequency [Max] | Frequency [Min] | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Fault Protection | Number of Outputs | Input Type | Output Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Switch Type | Voltage - Load | Rds On (Typ) | Interface | Voltage - Supply (Vcc/Vdd) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 20 pF 40 Ohms | Low Pass | 0.026 in | 0.65 mm | RC (Pi) | Surface Mount | 24-WFBGA FCBGA | 9 | 2nd | 40 Ohms | General Purpose | -30 ░C | 85 °C | 0.076 in | 1.92 mm | 1.92 mm | 0.076 in | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 144-UFBGA | -40 °C | 105 °C | Brown-out Detect/Reset DMA I2S LCD POR PWM WDT | ARM® Cortex®-M4 | FLASH | 100 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG | 1 MB | 114 | 144-UFBGA (10x10) | Internal | 16 | 12 b | 256 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 32 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 256 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 16 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 48 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 128 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 12 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | 8-SOIC Package | Board(s) | Bare (Unpopulated) | General Purpose | 1 - Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 4-XFBGA FCBGA | -40 °C | 125 ¯C | 4-FlipChip (0.63x0.63) | 0.2 V | Enable | 5.5 V | 250 mA | 1 | 425 µA | Positive | Over Current Over Temperature Short Circuit Soft Start | 1.81 mOhm | 80 dB | 60 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | RFID Reader | Board(s) | ST25RU3993 | 960 MHz | 840 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 49-UFBGA WLCSP | -40 °C | 85 °C | Brown-out Detect/Reset DMA I2S POR PWM WDT | ARM® Cortex®-M4 | FLASH | 84 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | I2C IrDA LINbus SDIO SPI UART/USART USB OTG | 128 KB | 36 | 49-WLCSP | Internal | 64 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | -55 °C | 150 °C | TO-220 | 25 V | N-Channel | 960 pF | 10 A | 4 V | 600 V | 90 W | 30.5 nC | 410 mOhm | 10 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -40 °C | 150 °C | DPAK | Low Side | Current Limiting (Fixed) Over Temperature Over Voltage | 1 | Non-Inverting | N-Channel | 1.7 A | 1:1 | General Purpose | 36 V | 250 mOhm | On/Off |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Integrated Circuits (ICs) | 8 | 1 | The M95320 devices are Electrically Erasable PROgrammable Memories (EEPROMs) organized as 4096 x 8 bits, accessed through the SPI bus.
The M95320 devices can operate with a supply range from 1.7 V to 5.5 V, and are guaranteed over the -40 °C/+85 °C temperature range. | |
| Integrated Circuits (ICs) | 7 | 1 | The M95512-A125 and M95512-A145 are 512-Kbit serial EEPROM Automotive grade devices operating up to 145°C. They are compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running up to 16 MHz. The... Read More | |
| Memory | 9 | 1 | The M95640-A125 and M95640-A145 are 64-Kbit serial EEPROM Automotive grade devices operating up to 145°C. They are compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running up to 20 MHz. The... Read More | |
| Memory | 7 | 1 | The M95M01-A125 and M95M01-A145 are 1-Mbit serial EEPROM Automotive grade devices operating up to 145°C. They are compliant with the very high level of reliability defined by the Automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running up to 16 MHz. The... Read More | |
| Integrated Circuits (ICs) | 2 | 1 | The M95M02 devices are electrically erasable programmable memory (EEPROM) organized as 262144 x 8 bits, accessed through the SPI bus. Over an ambient temperature range of -40 °C / +85 °C the M95M02-DR can operate with a supply voltage from 1.8 to 5.5 V. Over an ambient temperature range of... Read More | |
| Memory | 4 | 1 | The M95M04-A125 and M95M04-A145 are 4-Mbit serial EEPROM automotive grade devices operating up to 145 °C. They are compliant with the very high level of reliability defined by the automotive standard AEC-Q100 grade 0. The devices are accessed by a simple serial SPI compatible interface running at up to 10... Read More | |
| Integrated Circuits (ICs) | 1 | 1 | The M95P08-I and M95P08-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra‑low power consumption, equivalent to that of EEPROM technology. The M95P08-I and M95P08-E are an 8-Mbit SPI page EEPROM device organized as 2048 programmable pages of 512... Read More | |
| Integrated Circuits (ICs) | 1 | 1 | The M95P32-I and M95P32-E are manufactured with ST's advanced proprietary NVM technology. They offer byte flexibility, page alterability, high page cycling performance, and ultra-low power consumption, equivalent to that of EEPROM technology. The M95P32-I and M95P32-E are a 32-Mbit SPI page EEPROM device organized as 8192 programmable pages of 512... Read More | |
STMicroelectronicsMASTERGAN1High power density 600V half-bridge driver with two enhancement mode GaN HEMTs | Integrated Circuits (ICs) | 1 | 1 | The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON)of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be easily supplied by the integrated... Read More |
| Power Management (PMIC) | 1 | 1 | The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated... Read More | |