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STMicroelectronics
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Part | Values | Type | Height [z] | Height [z] | Technology | Mounting Type | Package / Case | ESD Protection | Number of Channels [custom] | Filter Order | Resistance - Channel (Ohms) | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Peripherals | Core Processor | Program Memory Type | Speed | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Core Size | Connectivity | Program Memory Size | Number of I/O | Supplier Device Package | Oscillator Type | Data Converters [custom] | Data Converters [custom] | RAM Size | Grade | Qualification | Utilized IC / Part | Supplied Contents | Board Type | Amplifier Type | Channels per IC | Voltage Dropout (Max) [Max] | Control Features | Voltage - Input (Max) [Max] | Current - Output | Number of Regulators | Current - Supply (Max) [Max] | Output Configuration | Protection Features | Output Type | PSRR [Max] | PSRR [Min] | For Use With/Related Products | Frequency [Max] | Frequency [Min] | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Fault Protection | Number of Outputs | Input Type | Output Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Switch Type | Voltage - Load | Rds On (Typ) | Interface | Voltage - Supply (Vcc/Vdd) |
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STMicroelectronics | 20 pF 40 Ohms | Low Pass | 0.026 in | 0.65 mm | RC (Pi) | Surface Mount | 24-WFBGA FCBGA | 9 | 2nd | 40 Ohms | General Purpose | -30 ░C | 85 °C | 0.076 in | 1.92 mm | 1.92 mm | 0.076 in | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 144-UFBGA | -40 °C | 105 °C | Brown-out Detect/Reset DMA I2S LCD POR PWM WDT | ARM® Cortex®-M4 | FLASH | 100 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG | 1 MB | 114 | 144-UFBGA (10x10) | Internal | 16 | 12 b | 256 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 32 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 256 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 16 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 48 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 128 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 12 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | 8-SOIC Package | Board(s) | Bare (Unpopulated) | General Purpose | 1 - Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 4-XFBGA FCBGA | -40 °C | 125 ¯C | 4-FlipChip (0.63x0.63) | 0.2 V | Enable | 5.5 V | 250 mA | 1 | 425 µA | Positive | Over Current Over Temperature Short Circuit Soft Start | 1.81 mOhm | 80 dB | 60 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | RFID Reader | Board(s) | ST25RU3993 | 960 MHz | 840 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 49-UFBGA WLCSP | -40 °C | 85 °C | Brown-out Detect/Reset DMA I2S POR PWM WDT | ARM® Cortex®-M4 | FLASH | 84 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | I2C IrDA LINbus SDIO SPI UART/USART USB OTG | 128 KB | 36 | 49-WLCSP | Internal | 64 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | -55 °C | 150 °C | TO-220 | 25 V | N-Channel | 960 pF | 10 A | 4 V | 600 V | 90 W | 30.5 nC | 410 mOhm | 10 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -40 °C | 150 °C | DPAK | Low Side | Current Limiting (Fixed) Over Temperature Over Voltage | 1 | Non-Inverting | N-Channel | 1.7 A | 1:1 | General Purpose | 36 V | 250 mOhm | On/Off |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| PMIC | 5 | 1 | The MC34063A/E series is a monolithic control circuit which delivers the main functions for DC-DC voltage converting. The device contains an internal temperature compensated reference, comparator, duty cycle controlled oscillator with an active current limit circuit, driver and high current output switch. Output voltage is adjustable through two external resistors... Read More | |
| Instrumentation, Op Amps, Buffer Amps | 5 | 1 | The MC4558 is a high performance monolithic dual operational amplifier.
The circuit combines all of the outstanding features of the MC1458, and in addition possesses three times the unity gain bandwidth of the industry standard. | |
| Discrete Semiconductor Products | 1 | 8 | The MD1802FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. | |
STMicroelectronicsMD2310 | Single Bipolar Transistors | 1 | 8 | |
STMicroelectronicsMJ40 | Transistors | 1 | 8 | |
| Single Bipolar Transistors | 1 | 1 | The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. | |
STMicroelectronicsMJD122 | Single Bipolar Transistors | 2 | 1 | |
| Bipolar (BJT) | 1 | 1 | The device is manufactured in planar technology with "base island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. | |
STMicroelectronicsMJD31 | Transistors | 1 | 8 | |
| Discrete Semiconductor Products | 1 | 1 | The MJD340 and MJD350 form complementary NPN -PNP pairs.
They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor. | |