MASTERGAN1L Series

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Catalog

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Part	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Typ)	Voltage - Load [Max]	Package / Case	Voltage - Supply [Min]	Voltage - Supply [Max]	Current - Output / Channel	Current - Peak Output	Technology	Load Type	Mounting Type	Features	Interface	Fault Protection	Supplier Device Package	Applications
STMicroelectronics MASTERGAN1LTR	150 °C	-40 °C	150 mOhm	600 V	31-VQFN Exposed Pad	4.75 V	9.5 V	10 A	17 A	MOSFET (Metal Oxide)	Capacitive Inductive Resistive	Surface Mount	Bootstrap Circuit	Logic	Over Temperature UVLO	31-QFN (9x9)	General Purpose

Catalog

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Key Features

• 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:

- QFN 9 x 9 x 1 mm package

- RDS(ON)= 150 mΩ

- IDS(MAX)= 10 A

Description

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analog controllers, microcontrollers and DSP units. The MASTERGAN1L operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.