MASTERGAN1L

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STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

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MASTERGAN1L

Active

STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

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Description Specifications Series Pricing CAD Documents

Description

General part information

MASTERGAN1L Series

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.

Technical Specifications

Parameters and characteristics for this part

Specification	MASTERGAN1L

Applications	General Purpose
Current - Output / Channel	10 A
Current - Peak Output	17 A
Fault Protection	Over Temperature, UVLO
Features	Bootstrap Circuit
Interface	Logic
Load Type	Capacitive, Resistive, Inductive
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Output Configuration	Half Bridge
Package / Case	31-VQFN Exposed Pad
Package Length	9 mm
Package Name	31-QFN
Package Width	9 mm
Rds On (Typ)	150 mOhm
Technology	MOSFET (Metal Oxide)
Voltage - Load (Max)	600 V
Voltage - Supply (Maximum)	9.5 V
Voltage - Supply (Minimum)	4.75 V

MASTERGAN1L Series

600 V half-bridge enhancement mode GaN HEMT with high voltage driver

Part	Rds On (Typ)	Load Type	Technology	Voltage - Load (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Features	Current - Peak Output	Output Configuration	Current - Output / Channel	Mounting Type	Package Name	Package Width	Package Length	Interface	Fault Protection	Applications	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Package / Case
STMicroelectronics MASTERGAN1LTR	150 mOhm	Capacitive Inductive Resistive	MOSFET (Metal Oxide)	600 V	-40 °C	150 °C	Bootstrap Circuit	17 A	Half Bridge	10 A	Surface Mount	31-QFN	9 mm	9 mm	Logic	Over Temperature UVLO	General Purpose	4.75 V	9.5 V	31-VQFN Exposed Pad
STMicroelectronics MASTERGAN1L	150 mOhm	Capacitive Inductive Resistive	MOSFET (Metal Oxide)	600 V	-40 °C	150 °C	Bootstrap Circuit	17 A	Half Bridge	10 A	Surface Mount	31-QFN	9 mm	9 mm	Logic	Over Temperature UVLO	General Purpose	4.75 V	9.5 V	31-VQFN Exposed Pad

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

MASTERGAN1L | Datasheet

AN6097

DS14355

AN5917