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MASTERGAN1LTR - STMICROELECTRONICS MASTERGAN4LTR

MASTERGAN1LTR

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STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

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MASTERGAN1LTR - STMICROELECTRONICS MASTERGAN4LTR

MASTERGAN1LTR

Active
STMicroelectronics

600 V HALF-BRIDGE ENHANCEMENT MODE GAN HEMT WITH HIGH VOLTAGE DRIVER

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMASTERGAN1LTR
ApplicationsGeneral Purpose
Current - Output / Channel10 A
Current - Peak Output17 A
Fault ProtectionOver Temperature, UVLO
FeaturesBootstrap Circuit
InterfaceLogic
Load TypeCapacitive, Inductive, Resistive
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case31-VQFN Exposed Pad
Rds On (Typ)150 mOhm
Supplier Device Package31-QFN (9x9)
TechnologyMOSFET (Metal Oxide)
Voltage - Load [Max]600 V
Voltage - Supply [Max]9.5 V
Voltage - Supply [Min]4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 9.92
10$ 6.89
25$ 6.11
100$ 5.24
250$ 4.81
500$ 4.56
1000$ 4.34
Digi-Reel® 1$ 9.92
10$ 6.89
25$ 6.11
100$ 5.24
250$ 4.81
500$ 4.56
1000$ 4.34
Tape & Reel (TR) 3000$ 4.47
NewarkEach (Supplied on Cut Tape) 1$ 7.92
10$ 6.13
25$ 5.73
50$ 5.43
100$ 5.19
250$ 4.95
500$ 4.81
1000$ 4.70

Description

General part information

MASTERGAN1L Series

The MASTERGAN1L is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration.

The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.

The MASTERGAN1L features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions.