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DMN62D0SFD-7 - 3-UDFN

DMN62D0SFD-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 540 MA, 2 OHM, X1-DFN1212, SURFACE MOUNT

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DMN62D0SFD-7 - 3-UDFN

DMN62D0SFD-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 540 MA, 2 OHM, X1-DFN1212, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D0SFD-7
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.87 nC
Input Capacitance (Ciss) (Max) @ Vds30.2 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UDFN
Power Dissipation (Max)430 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageX1-DFN1212-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
10$ 0.33
100$ 0.16
500$ 0.13
1000$ 0.10
Digi-Reel® 1$ 0.46
10$ 0.33
100$ 0.16
500$ 0.13
1000$ 0.10
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06
NewarkEach (Supplied on Cut Tape) 1$ 0.38
10$ 0.25
25$ 0.21
50$ 0.17
100$ 0.14
250$ 0.13
500$ 0.13
1000$ 0.13

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.