DMN62D1LFDQ Series

60V Dual N-Channel Enhancement Mode MOSFET

Catalog

60V Dual N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Technology	Power Dissipation (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Vgs(th) (Max) @ Id	Grade	Power Dissipation (Max) [Max]	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN62D0SFD-7	20 V	3-UDFN	60 V	30.2 pF	0.87 nC	MOSFET (Metal Oxide)	430 mW	N-Channel	10 V	5 V	-55 °C	150 °C	2 Ohm	2.5 V	X1-DFN1212-3	Surface Mount
Diodes Inc DMN62D2UQ-13	20 V	SC-59 SOT-23-3 TO-236-3	60 V	41 pF	0.8 nC	MOSFET (Metal Oxide)		N-Channel			-55 °C	150 °C	2 Ohm		SOT-23-3	Surface Mount	390 mA	1.8 V 5 V	AEC-Q101	1 V	Automotive	500 mW
Diodes Inc DMN62D2UDW-7		6-TSSOP SC-88 SOT-363	60 V	41 pF	0.8 nC	MOSFET (Metal Oxide)					-55 °C	150 °C	2 Ohm		SOT-363	Surface Mount	340 mA			1 V			300 mW	2 N-Channel
Diodes Inc DMN62D1LFD-7	20 V	3-UDFN	60 V	36 pF	0.55 nC	MOSFET (Metal Oxide)		N-Channel			-55 °C	150 °C			X1-DFN1212-3	Surface Mount	400 mA	1.8 V 4 V		1 V		500 mW			2 Ohm
Diodes Inc DMN62D0U-7	20 V	SC-59 SOT-23-3 TO-236-3	60 V	32 pF		MOSFET (Metal Oxide)	380 mW	N-Channel			-55 °C	150 °C	2 Ohm		SOT-23-3	Surface Mount	380 mA	1.8 V 4.5 V		1 V						0.5 nC
Diodes Inc DMN62D1LFDQ-7	20 V	3-PowerUDFN	60 V	36 pF	0.55 nC	MOSFET (Metal Oxide)		N-Channel	1.5 V	4 V	-55 °C	150 °C			U-DFN1212-3 (Type C)	Surface Mount	400 mA		AEC-Q101	1 V	Automotive	500 mW			2 Ohm
Diodes Inc DMN62D2UDW-13		6-TSSOP SC-88 SOT-363	60 V	41 pF	0.8 nC	MOSFET (Metal Oxide)					-55 °C	150 °C	2 Ohm		SOT-363	Surface Mount	340 mA			1 V			300 mW	2 N-Channel
Diodes Inc DMN62D0UT-13	20 V	SOT-523	60 V	32 pF		MOSFET (Metal Oxide)	230 mW	N-Channel			-55 °C	150 °C	2 Ohm		SOT-523	Surface Mount	320 mA	1.8 V 2.5 V 4.5 V		1 V						0.5 nC
Diodes Inc DMN62D1LFB-7B	20 V	3-UFDFN	60 V	64 pF		MOSFET (Metal Oxide)		N-Channel	1.5 V	4 V	-55 °C	150 °C			X1-DFN1006-3	Surface Mount	320 mA			1 V		500 mW			2 Ohm	0.9 nC
Diodes Inc DMN62D0U-13	20 V	SC-59 SOT-23-3 TO-236-3	60 V	32 pF		MOSFET (Metal Oxide)	380 mW	N-Channel			-55 °C	150 °C	2 Ohm		SOT-23-3	Surface Mount	380 mA	1.8 V 4.5 V		1 V						0.5 nC

Catalog

60V Dual N-Channel Enhancement Mode MOSFET

Key Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface-Mount Package

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.