Zenode.ai Logo
Beta
K
DMN62D1LFDQ-7 - Package Image for X1-DFN1212-3

DMN62D1LFDQ-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 400 MA, 0.8 OHM, U-DFN1212, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

DMN62D1LFDQ-7 - Package Image for X1-DFN1212-3

DMN62D1LFDQ-7

Active
Diodes Inc

POWER MOSFET, N CHANNEL, 60 V, 400 MA, 0.8 OHM, U-DFN1212, SURFACE MOUNT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D1LFDQ-7
Current - Continuous Drain (Id) @ 25°C400 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.55 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds36 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-PowerUDFN
Power Dissipation (Max) [Max]500 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]2 Ohm
Supplier Device PackageU-DFN1212-3 (Type C)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Digi-Reel® 1$ 0.44
10$ 0.31
100$ 0.16
500$ 0.14
1000$ 0.11
Tape & Reel (TR) 3000$ 0.10
6000$ 0.10
9000$ 0.08
30000$ 0.08
75000$ 0.07

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.