DMN62D0UT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN62D0UT-13
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN62D0UT-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 320 mA |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V, 2.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 32 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) | 230 mW |
| Rds On (Max) @ Id, Vgs | 2 Ohm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
DMN62D1LFDQ Series
60V Dual N-Channel Enhancement Mode MOSFET
| Part | Vgs (Max) | Package / Case | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Technology | Power Dissipation (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Vgs(th) (Max) @ Id | Grade | Power Dissipation (Max) [Max] | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 20 V | 3-UDFN | 60 V | 30.2 pF | 0.87 nC | MOSFET (Metal Oxide) | 430 mW | N-Channel | 10 V | 5 V | -55 °C | 150 °C | 2 Ohm | 2.5 V | X1-DFN1212-3 | Surface Mount | ||||||||||
Diodes Inc | 20 V | SC-59 SOT-23-3 TO-236-3 | 60 V | 41 pF | 0.8 nC | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | 2 Ohm | SOT-23-3 | Surface Mount | 390 mA | 1.8 V 5 V | AEC-Q101 | 1 V | Automotive | 500 mW | ||||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | 60 V | 41 pF | 0.8 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 Ohm | SOT-363 | Surface Mount | 340 mA | 1 V | 300 mW | 2 N-Channel | ||||||||||||
Diodes Inc | 20 V | 3-UDFN | 60 V | 36 pF | 0.55 nC | MOSFET (Metal Oxide) | N-Channel | -55 °C | 150 °C | X1-DFN1212-3 | Surface Mount | 400 mA | 1.8 V 4 V | 1 V | 500 mW | 2 Ohm | ||||||||||
Diodes Inc | 20 V | SC-59 SOT-23-3 TO-236-3 | 60 V | 32 pF | MOSFET (Metal Oxide) | 380 mW | N-Channel | -55 °C | 150 °C | 2 Ohm | SOT-23-3 | Surface Mount | 380 mA | 1.8 V 4.5 V | 1 V | 0.5 nC | ||||||||||
Diodes Inc | 20 V | 3-PowerUDFN | 60 V | 36 pF | 0.55 nC | MOSFET (Metal Oxide) | N-Channel | 1.5 V | 4 V | -55 °C | 150 °C | U-DFN1212-3 (Type C) | Surface Mount | 400 mA | AEC-Q101 | 1 V | Automotive | 500 mW | 2 Ohm | |||||||
Diodes Inc | 6-TSSOP SC-88 SOT-363 | 60 V | 41 pF | 0.8 nC | MOSFET (Metal Oxide) | -55 °C | 150 °C | 2 Ohm | SOT-363 | Surface Mount | 340 mA | 1 V | 300 mW | 2 N-Channel | ||||||||||||
Diodes Inc | 20 V | SOT-523 | 60 V | 32 pF | MOSFET (Metal Oxide) | 230 mW | N-Channel | -55 °C | 150 °C | 2 Ohm | SOT-523 | Surface Mount | 320 mA | 1.8 V 2.5 V 4.5 V | 1 V | 0.5 nC | ||||||||||
Diodes Inc | 20 V | 3-UFDFN | 60 V | 64 pF | MOSFET (Metal Oxide) | N-Channel | 1.5 V | 4 V | -55 °C | 150 °C | X1-DFN1006-3 | Surface Mount | 320 mA | 1 V | 500 mW | 2 Ohm | 0.9 nC | |||||||||
Diodes Inc | 20 V | SC-59 SOT-23-3 TO-236-3 | 60 V | 32 pF | MOSFET (Metal Oxide) | 380 mW | N-Channel | -55 °C | 150 °C | 2 Ohm | SOT-23-3 | Surface Mount | 380 mA | 1.8 V 4.5 V | 1 V | 0.5 nC |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.29 | |
| 10 | $ 0.18 | |||
| 100 | $ 0.11 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
| 2000 | $ 0.06 | |||
| 5000 | $ 0.06 | |||
| Digi-Reel® | 1 | $ 0.29 | ||
| 10 | $ 0.18 | |||
| 100 | $ 0.11 | |||
| 500 | $ 0.08 | |||
| 1000 | $ 0.07 | |||
| 2000 | $ 0.06 | |||
| 5000 | $ 0.06 | |||
| Tape & Reel (TR) | 10000 | $ 0.05 | ||
| 30000 | $ 0.05 | |||
| 50000 | $ 0.04 | |||
| 100000 | $ 0.04 | |||
| 250000 | $ 0.04 | |||
Description
General part information
DMN62D1LFDQ Series
This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.
Documents
Technical documentation and resources