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DMN62D2UDW-13 - Package Image for SOT363

DMN62D2UDW-13

Active
Diodes Inc

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DMN62D2UDW-13 - Package Image for SOT363

DMN62D2UDW-13

Active
Diodes Inc

60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D2UDW-13
Configuration2 N-Channel
Current - Continuous Drain (Id) @ 25°C340 mA
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs0.8 nC
Input Capacitance (Ciss) (Max) @ Vds41 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]300 mW
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageSOT-363
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.06
20000$ 0.05
30000$ 0.05
50000$ 0.05
70000$ 0.05
100000$ 0.05

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.