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DMN62D1LFD-7 - 3-XDFN

DMN62D1LFD-7

Active
Diodes Inc

60V 400MA 2Ω@4V,100MA 500MW 1V 1 N-CHANNEL X1-DFN1212-3 MOSFETS ROHS

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DMN62D1LFD-7 - 3-XDFN

DMN62D1LFD-7

Active
Diodes Inc

60V 400MA 2Ω@4V,100MA 500MW 1V 1 N-CHANNEL X1-DFN1212-3 MOSFETS ROHS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D1LFD-7
Current - Continuous Drain (Id) @ 25°C400 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)1.8 V, 4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs0.55 nC
Input Capacitance (Ciss) (Max) @ Vds36 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]2 Ohm
Supplier Device PackageX1-DFN1212-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.42
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.42
10$ 0.29
100$ 0.15
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.07
9000$ 0.06
30000$ 0.06
75000$ 0.05
150000$ 0.05
LCSCPiece 5$ 0.10
50$ 0.08
150$ 0.07
500$ 0.06
3000$ 0.05
6000$ 0.05

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.