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DMN62D1LFB-7B - X2-DFN1006-3

DMN62D1LFB-7B

Active
Diodes Inc

TRANS MOSFET N-CH 60V 0.32A 3-PIN DFN SMD T/R

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DMN62D1LFB-7B - X2-DFN1006-3

DMN62D1LFB-7B

Active
Diodes Inc

TRANS MOSFET N-CH 60V 0.32A 3-PIN DFN SMD T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN62D1LFB-7B
Current - Continuous Drain (Id) @ 25°C320 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.9 nC
Input Capacitance (Ciss) (Max) @ Vds64 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-UFDFN
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs [Max]2 Ohm
Supplier Device PackageX1-DFN1006-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.39
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Digi-Reel® 1$ 0.39
10$ 0.27
100$ 0.14
500$ 0.11
1000$ 0.08
2000$ 0.07
5000$ 0.07
Tape & Reel (TR) 10000$ 0.06
30000$ 0.06
50000$ 0.05

Description

General part information

DMN62D1LFDQ Series

This new generation 60V N channel enhancement mode MOSFET has been designed to minimise RDS(ON)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.