Beta

⌘K

S

STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

...

Part	Values	Type	Height [z]	Height [z]	Technology	Mounting Type	Package / Case	ESD Protection	Number of Channels [custom]	Filter Order	Resistance - Channel (Ohms)	Applications	Operating Temperature [Min]	Operating Temperature [Max]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Peripherals	Core Processor	Program Memory Type	Speed	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Core Size	Connectivity	Program Memory Size	Number of I/O	Supplier Device Package	Oscillator Type	Data Converters [custom]	Data Converters [custom]	RAM Size	Grade	Qualification	Utilized IC / Part	Supplied Contents	Board Type	Amplifier Type	Channels per IC	Voltage Dropout (Max) [Max]	Control Features	Voltage - Input (Max) [Max]	Current - Output	Number of Regulators	Current - Supply (Max) [Max]	Output Configuration	Protection Features	Output Type	PSRR [Max]	PSRR [Min]	For Use With/Related Products	Frequency [Max]	Frequency [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Fault Protection	Number of Outputs	Input Type	Output Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Switch Type	Voltage - Load	Rds On (Typ)	Interface	Voltage - Supply (Vcc/Vdd)
STMicroelectronics EMIF09-SD01F3	20 pF 40 Ohms	Low Pass	0.026 in	0.65 mm	RC (Pi)	Surface Mount	24-WFBGA FCBGA		9	2nd	40 Ohms	General Purpose	-30 ░C	85 °C	0.076 in	1.92 mm	1.92 mm	0.076 in
STMicroelectronics STM32F412ZGJ7						Surface Mount	144-UFBGA						-40 °C	105 °C					Brown-out Detect/Reset DMA I2S LCD POR PWM WDT	ARM® Cortex®-M4	FLASH	100 MHz	3.6 V	1.7 V	32-Bit Single-Core	CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG	1 MB	114	144-UFBGA (10x10)	Internal	16	12 b	256 K
STMicroelectronics SPC560D40L1B3E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	32 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	256 KB	45	64-LQFP (10x10)	Internal	16	12 b	16 K	Automotive	AEC-Q100
STMicroelectronics SPC560D30L1B4E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	48 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	128 KB	45	64-LQFP (10x10)	Internal	16	12 b	12 K	Automotive	AEC-Q100
STMicroelectronics STEVAL-CCA036V1																																				8-SOIC Package	Board(s)	Bare (Unpopulated)	General Purpose	1 - Single
STMicroelectronics LDLN025J30R						Surface Mount	4-XFBGA FCBGA						-40 °C	125 ¯C															4-FlipChip (0.63x0.63)												0.2 V	Enable	5.5 V	250 mA	1	425 µA	Positive	Over Current Over Temperature Short Circuit Soft Start	1.81 mOhm	80 dB	60 dB
STMicroelectronics ST25RU3993-EVAL		RFID Reader																																			Board(s)															ST25RU3993	960 MHz	840 MHz
STMicroelectronics STM32F401CBY6TT						Surface Mount	49-UFBGA WLCSP						-40 °C	85 °C					Brown-out Detect/Reset DMA I2S POR PWM WDT	ARM® Cortex®-M4	FLASH	84 MHz	3.6 V	1.7 V	32-Bit Single-Core	I2C IrDA LINbus SDIO SPI UART/USART USB OTG	128 KB	36	49-WLCSP	Internal			64 K
STMicroelectronics STP12NM60N					MOSFET (Metal Oxide)	Through Hole	TO-220-3						-55 °C	150 °C															TO-220																										25 V	N-Channel	960 pF	10 A	4 V	600 V	90 W	30.5 nC	410 mOhm	10 V
STMicroelectronics VND1NV04						Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3						-40 °C	150 °C															DPAK																		Low Side																		Current Limiting (Fixed) Over Temperature Over Voltage	1	Non-Inverting	N-Channel	1.7 A	1:1	General Purpose	36 V	250 mOhm	On/Off

Series	Category	# Parts	Status	Description

STMicroelectronicsSTW50	FETs, MOSFETs	1	1
STMicroelectronicsSTW55N	Transistors	1	8
STMicroelectronicsSTW56N60M2-4N-channel 600 V, 0.052 Ohm typ., 50 A MDmesh DM2 Power MOSFET in a TO-247 package	Discrete Semiconductor Products	2	1	This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STMicroelectronicsSTW58N65DM2AGAutomotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 package	Discrete Semiconductor Products	1	1	This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STMicroelectronicsSTW60N	FETs, MOSFETs	1	8
STMicroelectronicsSTW63N65DM2N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package	FETs, MOSFETs	1	1	This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high- efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STMicroelectronicsSTW65N65DM2AGAutomotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package	Discrete Semiconductor Products	1	1	This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
STMicroelectronicsSTW68N65DM6-4AGAutomotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package	FETs, MOSFETs	2	1	The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More
STMicroelectronicsSTW69N65M5-4N-channel 650 V, 0.037 Ohm typ., 58 A MDmesh M5 Power MOSFET in a TO247-4 package	Single	1	1	This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior... Read More
STMicroelectronicsSTW70N65M2N-channel 650 V, 0.039 Ohm typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package	Transistors	1	1	This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.