STW68N65DM6-4AG Series

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package

Catalog

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Technology	Grade	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Qualification	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Package / Case	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STW68N65DM6-4AG	N-Channel	72 A	MOSFET (Metal Oxide)	Automotive	TO-247-4	39 mOhm	118 nC	5900 pF	650 V	AEC-Q101	4.75 V	-55 °C	150 °C	Through Hole	480 W	25 V	TO-247-4
STMicroelectronics STW68N60M6-4	N-Channel	63 A	MOSFET (Metal Oxide)		TO-247-4	41 mOhm			600 V		4.75 V	-55 °C	150 °C	Through Hole		25 V	TO-247-4	390 W	4360 pF	106 nC	10 V

Catalog

Automotive-grade N-channel 650 V, 33 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO247-4 package

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.