
STW68N65DM6-4AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE
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STW68N65DM6-4AG
ActiveAUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STW68N65DM6-4AG |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 72 A |
| Drain to Source Voltage (Vdss) | 650 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 118 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 5900 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 480 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 39 mOhm |
| Supplier Device Package | TO-247-4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STW68N65DM6-4AG Series
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Documents
Technical documentation and resources