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STW68N65DM6-4AG - TO-247-4

STW68N65DM6-4AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE

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STW68N65DM6-4AG - TO-247-4

STW68N65DM6-4AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 33 MOHM TYP., 72 A MDMESH DM6 POWER MOSFET IN A TO247-4 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW68N65DM6-4AG
Current - Continuous Drain (Id) @ 25°C72 A
Drain to Source Voltage (Vdss)650 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]118 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]5900 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-4
Power Dissipation (Max)480 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs39 mOhm
Supplier Device PackageTO-247-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 10.02
30$ 7.11
120$ 6.98
NewarkEach 1$ 13.31
10$ 12.01
25$ 10.96

Description

General part information

STW68N65DM6-4AG Series

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources