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STMicroelectronics
| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Part | Values | Type | Height [z] | Height [z] | Technology | Mounting Type | Package / Case | ESD Protection | Number of Channels [custom] | Filter Order | Resistance - Channel (Ohms) | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Peripherals | Core Processor | Program Memory Type | Speed | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Core Size | Connectivity | Program Memory Size | Number of I/O | Supplier Device Package | Oscillator Type | Data Converters [custom] | Data Converters [custom] | RAM Size | Grade | Qualification | Utilized IC / Part | Supplied Contents | Board Type | Amplifier Type | Channels per IC | Voltage Dropout (Max) [Max] | Control Features | Voltage - Input (Max) [Max] | Current - Output | Number of Regulators | Current - Supply (Max) [Max] | Output Configuration | Protection Features | Output Type | PSRR [Max] | PSRR [Min] | For Use With/Related Products | Frequency [Max] | Frequency [Min] | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Fault Protection | Number of Outputs | Input Type | Output Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Switch Type | Voltage - Load | Rds On (Typ) | Interface | Voltage - Supply (Vcc/Vdd) |
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STMicroelectronics | 20 pF 40 Ohms | Low Pass | 0.026 in | 0.65 mm | RC (Pi) | Surface Mount | 24-WFBGA FCBGA | 9 | 2nd | 40 Ohms | General Purpose | -30 ░C | 85 °C | 0.076 in | 1.92 mm | 1.92 mm | 0.076 in | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 144-UFBGA | -40 °C | 105 °C | Brown-out Detect/Reset DMA I2S LCD POR PWM WDT | ARM® Cortex®-M4 | FLASH | 100 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG | 1 MB | 114 | 144-UFBGA (10x10) | Internal | 16 | 12 b | 256 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 32 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 256 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 16 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 48 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 128 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 12 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | 8-SOIC Package | Board(s) | Bare (Unpopulated) | General Purpose | 1 - Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 4-XFBGA FCBGA | -40 °C | 125 ¯C | 4-FlipChip (0.63x0.63) | 0.2 V | Enable | 5.5 V | 250 mA | 1 | 425 µA | Positive | Over Current Over Temperature Short Circuit Soft Start | 1.81 mOhm | 80 dB | 60 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | RFID Reader | Board(s) | ST25RU3993 | 960 MHz | 840 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 49-UFBGA WLCSP | -40 °C | 85 °C | Brown-out Detect/Reset DMA I2S POR PWM WDT | ARM® Cortex®-M4 | FLASH | 84 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | I2C IrDA LINbus SDIO SPI UART/USART USB OTG | 128 KB | 36 | 49-WLCSP | Internal | 64 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | -55 °C | 150 °C | TO-220 | 25 V | N-Channel | 960 pF | 10 A | 4 V | 600 V | 90 W | 30.5 nC | 410 mOhm | 10 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -40 °C | 150 °C | DPAK | Low Side | Current Limiting (Fixed) Over Temperature Over Voltage | 1 | Non-Inverting | N-Channel | 1.7 A | 1:1 | General Purpose | 36 V | 250 mOhm | On/Off |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW36 | Transistors | 1 | 8 | |
STMicroelectronicsSTW37 | Single FETs, MOSFETs | 1 | 1 | |
STMicroelectronicsSTW38N | Single | 1 | 8 | |
STMicroelectronicsSTW40N | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTW40N95DK5N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 package | Single | 4 | 1 | These very high voltage N-channel Power MOSFETs are part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full... Read More |
STMicroelectronicsSTW43N | Transistors | 1 | 8 | |
STMicroelectronicsSTW45N60DM2AGAutomotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package | Single FETs, MOSFETs | 2 | 1 | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power... Read More |
STMicroelectronicsSTW47N | Single FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTW48N60M2-4N-channel 600 V, 60 mOhm typ., 42 A MDmesh M2 Power MOSFET in a TO247-4 package | Transistors | 4 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
| Transistors | 1 | 1 | Using the well consolidated high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the companys proprietary edge termination structure, gives the lowest RDS(on)per area, unrivalled gate charge and switching characteristics. | |