STW45N60DM2AG Series

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

Catalog

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

Part	Technology	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Operating Temperature	Grade	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	Qualification	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STW45N65M5	MOSFET (Metal Oxide)	91 nC	3375 pF	20 V	TO-247-3	210 W	35 A	5 V	10 V	Through Hole	TO-247-3	650 V	N-Channel	150 °C
STMicroelectronics STW45N60DM2AG	MOSFET (Metal Oxide)			25 V	TO-247-3		34 A	5 V	10 V	Through Hole	TO-247-3	600 V	N-Channel		Automotive	56 nC	250 W	AEC-Q101	93 mOhm	-55 °C	150 °C	2500 pF

Catalog

Automotive-grade N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in a TO-247 package

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.