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STMicroelectronics
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| Part | Values | Type | Height [z] | Height [z] | Technology | Mounting Type | Package / Case | ESD Protection | Number of Channels [custom] | Filter Order | Resistance - Channel (Ohms) | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Peripherals | Core Processor | Program Memory Type | Speed | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Core Size | Connectivity | Program Memory Size | Number of I/O | Supplier Device Package | Oscillator Type | Data Converters [custom] | Data Converters [custom] | RAM Size | Grade | Qualification | Utilized IC / Part | Supplied Contents | Board Type | Amplifier Type | Channels per IC | Voltage Dropout (Max) [Max] | Control Features | Voltage - Input (Max) [Max] | Current - Output | Number of Regulators | Current - Supply (Max) [Max] | Output Configuration | Protection Features | Output Type | PSRR [Max] | PSRR [Min] | For Use With/Related Products | Frequency [Max] | Frequency [Min] | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Fault Protection | Number of Outputs | Input Type | Output Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Switch Type | Voltage - Load | Rds On (Typ) | Interface | Voltage - Supply (Vcc/Vdd) |
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STMicroelectronics | 20 pF 40 Ohms | Low Pass | 0.026 in | 0.65 mm | RC (Pi) | Surface Mount | 24-WFBGA FCBGA | 9 | 2nd | 40 Ohms | General Purpose | -30 ░C | 85 °C | 0.076 in | 1.92 mm | 1.92 mm | 0.076 in | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 144-UFBGA | -40 °C | 105 °C | Brown-out Detect/Reset DMA I2S LCD POR PWM WDT | ARM® Cortex®-M4 | FLASH | 100 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG | 1 MB | 114 | 144-UFBGA (10x10) | Internal | 16 | 12 b | 256 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 32 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 256 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 16 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 48 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 128 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 12 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | 8-SOIC Package | Board(s) | Bare (Unpopulated) | General Purpose | 1 - Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 4-XFBGA FCBGA | -40 °C | 125 ¯C | 4-FlipChip (0.63x0.63) | 0.2 V | Enable | 5.5 V | 250 mA | 1 | 425 µA | Positive | Over Current Over Temperature Short Circuit Soft Start | 1.81 mOhm | 80 dB | 60 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | RFID Reader | Board(s) | ST25RU3993 | 960 MHz | 840 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 49-UFBGA WLCSP | -40 °C | 85 °C | Brown-out Detect/Reset DMA I2S POR PWM WDT | ARM® Cortex®-M4 | FLASH | 84 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | I2C IrDA LINbus SDIO SPI UART/USART USB OTG | 128 KB | 36 | 49-WLCSP | Internal | 64 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | -55 °C | 150 °C | TO-220 | 25 V | N-Channel | 960 pF | 10 A | 4 V | 600 V | 90 W | 30.5 nC | 410 mOhm | 10 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -40 °C | 150 °C | DPAK | Low Side | Current Limiting (Fixed) Over Temperature Over Voltage | 1 | Non-Inverting | N-Channel | 1.7 A | 1:1 | General Purpose | 36 V | 250 mOhm | On/Off |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTL22N65M5N-channel 650 V, 180 mOhm typ., 15 A MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package | Discrete Semiconductor Products | 2 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTL23 | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTL24N60M6N-channel 600 V, 0.175 Ohm typ., 15 A MDmesh M6 Power MOSFET in a PowerFLAT 8x8 HV package | Discrete Semiconductor Products | 1 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTL25N60M2-EPN-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | 1 | This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
STMicroelectronicsSTL260N4F7N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5x6 package | FETs, MOSFETs | 1 | 1 | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STMicroelectronicsSTL26N60DM6N-channel 600 V, 175 mOhm typ., 15 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | 1 | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for... Read More |
STMicroelectronicsSTL300N4LF8N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Discrete Semiconductor Products | 1 | 1 | The STL300N4LF8 is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STMicroelectronicsSTL305N4LF8AGAutomotive N-Channel Enhancement Mode Logic Level 40V, 1mOhm max, 305A STripFET F8 Power MOSFET in a PowerFLAT 5x6 package | Single | 1 | 1 | The STL305N4LF8AG is a 40 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. |
STMicroelectronicsSTL30P3LLH6P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package | Single | 2 | 1 | This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STMicroelectronicsSTL33N60M2N-channel 600 V, 0.115 Ohm typ., 22 A MDmesh M2 Power MOSFET in a PowerFLAT 8x8 HV package | Single FETs, MOSFETs | 2 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |