STL25N60M2-EP Series

N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package

Catalog

N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STL25N60M2-EP	-55 °C	150 °C	4.75 V	8-PowerVDFN	16 A	N-Channel	125 W	MOSFET (Metal Oxide)	29 nC	PowerFlat™ (8x8) HV	Surface Mount	1090 pF	10 V	25 V	205 mOhm	600 V
STMicroelectronics STL25N15F3	-55 °C	150 °C	4 V	8-PowerVDFN	25 A	N-Channel	80 W	MOSFET (Metal Oxide)	29 nC	PowerFlat™ (5x6)	Surface Mount		10 V	20 V	57 mOhm	150 V	1300 pF

Catalog

N-channel 600 V, 0.184 Ohm typ., 16 A MDmesh M2 EP Power MOSFET in a PowerFLAT 8x8 HV package

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters.