STL30P3LLH6 Series

P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package

Catalog

P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package

Part	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Power Dissipation (Max)	Operating Temperature	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STL30P3LLH6	PowerFlat™ (5x6)	30 mOhm	4.5 V 10 V	MOSFET (Metal Oxide)	20 V	30 A	12 nC	1 V	8-PowerVDFN	1450 pF	Surface Mount	P-Channel	75 W	175 °C	30 V
STMicroelectronics STL30N10F7	PowerFlat™ (5x6)	35 mOhm	10 V	MOSFET (Metal Oxide)	20 V	30 A		4.5 V	8-PowerVDFN		Surface Mount	N-Channel	75 W		100 V	-55 °C	175 ░C	920 pF	14 nC

Catalog

P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package

Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.