Technical Specifications
Parameters and characteristics for this part
| Specification | STL30N10F7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 75 W |
| Rds On (Max) @ Id, Vgs | 35 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL30P3LLH6 Series
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources
Datasheet
DatasheetFlyers (5 of 6)
AN4789
Application NotesAN4337
Application NotesAN4191
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
AN3267
Application NotesFlyers (5 of 6)
Flyers (5 of 6)
TN1225
Technical Notes & ArticlesFlyers (5 of 6)
