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STL30N10F7 - 8PowerVDFN

STL30N10F7

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STMicroelectronics

N-CHANNEL 100 V, 0.027 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN POWERFLAT 5X6 PACKAGE

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DocumentsDatasheet+15
STL30N10F7 - 8PowerVDFN

STL30N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.027 OHM TYP., 8 A STRIPFET F7 POWER MOSFET IN POWERFLAT 5X6 PACKAGE

Deep-Dive with AI

DocumentsDatasheet+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL30N10F7
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC
Input Capacitance (Ciss) (Max) @ Vds920 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.85
10$ 0.69
100$ 0.54
500$ 0.46
1000$ 0.45
Digi-Reel® 1$ 0.85
10$ 0.69
100$ 0.54
500$ 0.46
1000$ 0.45
Tape & Reel (TR) 3000$ 0.45
NewarkEach (Supplied on Full Reel) 3000$ 0.80
6000$ 0.77
12000$ 0.75

Description

General part information

STL30P3LLH6 Series

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.