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STL30P3LLH6 - PowerFlat™

STL30P3LLH6

Active
STMicroelectronics

P-CHANNEL 30 V, 0.024 OHM TYP., 30 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A POWERFLAT(TM) 5X6 PACKAGE

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STL30P3LLH6 - PowerFlat™

STL30P3LLH6

Active
STMicroelectronics

P-CHANNEL 30 V, 0.024 OHM TYP., 30 A STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET IN A POWERFLAT(TM) 5X6 PACKAGE

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Technical Specifications

Parameters and characteristics for this part

SpecificationSTL30P3LLH6
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1450 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs30 mOhm
Supplier Device PackagePowerFlat™ (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.01
10$ 0.83
100$ 0.64
500$ 0.55
1000$ 0.44
Digi-Reel® 1$ 1.01
10$ 0.83
100$ 0.64
500$ 0.55
1000$ 0.44
Tape & Reel (TR) 3000$ 0.42
6000$ 0.40
9000$ 0.38

Description

General part information

STL30P3LLH6 Series

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.