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STMicroelectronics

Series	Category	# Parts	Status	Description

Series	Category	# Parts	Status	Description

STMicroelectronicsSTU5N	Transistors	1	8
STMicroelectronicsSTU5N62	FETs, MOSFETs	2	1
STMicroelectronicsSTU5N65	Discrete Semiconductor Products	2	1
STMicroelectronicsSTU5N70	Transistors	1	8
STMicroelectronicsSTU5N95N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package	Discretes	4	1	This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
STMicroelectronicsSTU5N95K3N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package	Discretes	4	1	This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
STMicroelectronicsSTU60N	Transistors	2	8
STMicroelectronicsSTU6N62N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK	Transistors	2	1	This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
STMicroelectronicsSTU6N62K3N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK	Transistors	2	1	This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.
STMicroelectronicsSTU6N65N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package	Single FETs, MOSFETs	3	1	These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.