| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTU6N65M2N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package | Single FETs, MOSFETs | 2 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU6N90K5N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package | Single MOSFETs | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| MDmesh K5 series | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. | |
STMicroelectronicsSTU6N95K5N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in an IPAK package | MDmesh K5 series | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU6NF10N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET | STPOWER N-channel MOSFETs > 30 V to 200 V | 2 | 1 | This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive... Read More |
STMicroelectronicsSTU75N | FETs, MOSFETs | 2 | 8 | |
STMicroelectronicsSTU7LN80K5N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a IPAK package | STPOWER N-channel MOSFETs > 700 V | 1 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU7N105K5N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in an IPAK package | STPOWER N-channel MOSFETs > 700 V | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU7N60M2N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package | STPOWER N-channel MOSFETs > 200 V to 700 V | 2 | 1 | These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU7N65 | FETs, MOSFETs | 1 | 8 | |