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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTU7N65M2N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a IPAK package | Single MOSFETs | 3 | 1 | These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU7N80K5N-channel 800 V, 0.95 Ohm typ., 6 A MDmesh K5 Power MOSFET in IPAK package | STPOWER N-channel MOSFETs > 700 V | 1 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU7NF25N-channel 250 V 290 mOhm typ., 8 A, STripFET II Power MOSFET in a IPAK package | STPOWER N-channel MOSFETs > 200 V to 700 V | 2 | 1 | This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
| Power transistors | 3 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. | |
STMicroelectronicsSTU7NM60NN-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package | Power transistors | 3 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU80 | Single FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTU85 | Transistors | 1 | 8 | |
STMicroelectronicsSTU8N | Transistors | 1 | 8 | |
STMicroelectronicsSTU95 | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTU9N60M2N-channel 600 V, 0.72 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in IPAK package | Mosfets | 3 | 1 | These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. |