STU7NM60N Series

N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package

Catalog

N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Package / Case	FET Type
STMicroelectronics STU7NM60N	Through Hole	600 V	5 A	MOSFET (Metal Oxide)	363 pF	10 V	900 mOhm	25 V	4 V	TO-251 (IPAK)	45 W	14 nC	150 °C	IPAK, TO-251-3 Short Leads, TO-251AA	N-Channel

Catalog

N-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in IPAK package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.