| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTU2N95K5N-channel 950 V, 4.2 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package | Power transistors | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU2NK100ZN-channel 1000 V, 6.25 Ohm typ., 1.85 A SuperMESH Power MOSFET in an IPAK package | STPOWER N-channel MOSFETs > 700 V | 1 | 1 | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTU3LN80K5N-channel 800 V, 2.75 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package | MDmesh K5 series | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU3N45K3N-channel 450 V, 3.3 Ohm typ., 1.8 A MDmesh K3 Power MOSFET in an IPAK package | Power transistors | 2 | 1 | This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
STMicroelectronicsSTU3N62K3N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package | Power transistors | 1 | 1 | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STMicroelectronicsSTU3N80K5N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in an IPAK package | STPOWER N-channel MOSFETs > 700 V | 3 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STMicroelectronicsSTU4N52N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package | STPOWER N-channel MOSFETs > 200 V to 700 V | 3 | 1 | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STMicroelectronicsSTU4N52K3N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package | STPOWER N-channel MOSFETs > 200 V to 700 V | 3 | 1 | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STMicroelectronicsSTU4N62K3N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in an IPAK package | Semiconductors - Discretes | 3 | 1 | These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STMicroelectronicsSTU4N80 | Discretes | 2 | 1 | |