STU4N52K3 Series

N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package

Catalog

N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Supplier Device Package	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Package / Case
STMicroelectronics STU4N52K3	45 W	MOSFET (Metal Oxide)	2.5 A	150 °C	IPAK	Through Hole	30 V	525 V	334 pF	10 V	11 nC	2.6 Ohm	4.5 V	N-Channel	IPAK, TO-251-3 Short Leads, TO-251AA

Catalog

N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in IPAK package

Description

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.