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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Transistors | 2 | 1 | This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. | |
| Transistors | 2 | 1 | This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. | |
STMicroelectronicsSTU13N | Single FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTU13N60M2N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in an IPAK package | MDmesh M2 series | 1 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU16N | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTU16N65M2N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package | Single MOSFETs | 2 | 1 | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTU2LN60 | FETs, MOSFETs | 1 | 1 | |
STMicroelectronicsSTU2N105K5N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in an IPAK package | Power transistors | 2 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Power transistors | 1 | 1 | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. | |
STMicroelectronicsSTU2N80K5N-channel 800 V, 3.5 Ohm typ., 2 A MDmesh K5 Power MOSFET in an IPAK package | Power transistors | 1 | 1 | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |