STU5N95 Series

N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package

Catalog

N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STU5N95K3	-55 °C	150 °C	TO-251 (IPAK)	MOSFET (Metal Oxide)	90 W	IPAK, TO-251-3 Short Leads, TO-251AA	950 V	N-Channel	19 nC	10 V	3.5 Ohm	30 V	Through Hole	5 V	4 A	460 pF

Catalog

N-channel 950 V, 3 Ohm typ., 4 A MDmesh K3 Power MOSFET in an IPAK package

Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.