STU6N62 Series

N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK

Catalog

N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Power Dissipation (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
STMicroelectronics STU6N62K3	30 nC	MOSFET (Metal Oxide)	Through Hole	875 pF	5.5 A	TO-251 (IPAK)	IPAK, TO-251-3 Short Leads, TO-251AA	10 V	N-Channel	30 V	90 W	150 °C	1.2 Ohm	4.5 V	620 V

Catalog

N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in IPAK

Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.