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IPD60R1K0PFD7SAUMA1

IPD60R1K0PFD7SAUMA1

NRND
INFINEON

600V COOLMOS™ PFD7 SUPERJUNCTION MOSFET IN TO-252 DPAK PACKAGE

IPD60R1K0PFD7SAUMA1

IPD60R1K0PFD7SAUMA1

NRND
INFINEON

600V COOLMOS™ PFD7 SUPERJUNCTION MOSFET IN TO-252 DPAK PACKAGE

Description

General part information

IPD60R Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on)of 1,000mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill of material the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R1K0PFD7SAUMA1
Current - Continuous Drain (Id) (Tc)4.7 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6 nC
Input Capacitance (Ciss) (Max)230 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)26 W
Rds On (Max)1 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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    IPD60R1K0PFD7SAUMA1 | INFINEON | Zenode.ai