IPD60R950C6ATMA1

NRND

INFINEON

POWER MOSFET, COOLMOS, N CHANNEL, 650 V, 5.7 A, 0.68 OHM, TO-252 (DPAK), SURFACE MOUNT

IPD60R950C6ATMA1

NRND

INFINEON

POWER MOSFET, COOLMOS, N CHANNEL, 650 V, 5.7 A, 0.68 OHM, TO-252 (DPAK), SURFACE MOUNT

Description Specifications Series Pricing CAD Documents

Description

General part information

IPD60R Series

The IPD60R750E6 is a 600V CoolMOS™ E6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ E6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R950C6ATMA1

Current - Continuous Drain (Id) (Tc)	4.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	37 W
Rds On (Max)	950 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPD60R Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	FET Type	Package / Case	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Mounting Type	Technology
INFINEON IPD60R1K0CEAUMA1	13 nC	280 pF	20 V	600 V	PG-TO252-3-344	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	1 Ohm	6.8 A	-40 °C	150 °C	61 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R600C6ATMA1	20.5 nC	440 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	600 mOhm	7.3 A	-55 °C	150 °C	63 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R520C6BTMA1	23.4 nC	512 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	520 mOhm	8.1 A	-55 °C	150 °C	66 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R380C6ATMA1	32 nC	700 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	380 mOhm	10.6 A	-55 °C	150 °C	83 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R3K3C6	4.6 nC	93 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	3.3 Ohm	1.7 A	-55 °C	150 °C	18.1 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R2K0PFD7SAUMA1	3.8 nC	134 pF	20 V	600 V	PG-TO252-3-344	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	10 V	2 Ohm	3 A	-40 °C	150 °C	20 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R1K0PFD7SAUMA1	6 nC	230 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	10 V	1 Ohm	4.7 A	-40 °C	150 °C	26 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R280P7SE8228AUMA1	18 nC	761 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	10 V	280 mOhm	12 A	-40 °C	150 °C	53 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R2K1CEBTMA1	6.7 nC	140 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	2.1 Ohm	2.3 A	-40 °C	150 °C	22 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R950C6ATMA1	13 nC	280 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	950 mOhm	4.4 A	-55 °C	150 °C	37 W	Surface Mount	MOSFET (Metal Oxide)

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IPD60R950C6ATMA1 | Datasheet

Application Note EN