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IPD60R2K0PFD7SAUMA1

IPD60R2K0PFD7SAUMA1

Obsolete
INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

IPD60R2K0PFD7SAUMA1

IPD60R2K0PFD7SAUMA1

Obsolete
INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

Description

General part information

IPD60R Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R2K0PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPD60R2K0PFD7S in a TO-252 DPAK package features RDS(on)of 2,000mOhm leading to low switching losses. An implemented fast body diode secures a robust device and in turn reduced bill-of-material (BOM) for the customer. Additionally, our industry-leading SMD package offering contributes to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R2K0PFD7SAUMA1
Current - Continuous Drain (Id) (Tc)3 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)3.8 nC
Input Capacitance (Ciss) (Max)134 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-344
Power Dissipation (Max)20 W
Rds On (Max)2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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