
IPD60R2K0PFD7SAUMA1
ObsoleteCOOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE

IPD60R2K0PFD7SAUMA1
ObsoleteCOOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 2000 MOHM; PRICE/PERFORMANCE
Description
General part information
IPD60R Series
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R2K0PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPD60R2K0PFD7S in a TO-252 DPAK package features RDS(on)of 2,000mOhm leading to low switching losses. An implemented fast body diode secures a robust device and in turn reduced bill-of-material (BOM) for the customer. Additionally, our industry-leading SMD package offering contributes to PCB space savings and simplifies manufacturing. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD60R2K0PFD7SAUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 3.8 nC |
| Input Capacitance (Ciss) (Max) | 134 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3-344 |
| Power Dissipation (Max) | 20 W |
| Rds On (Max) | 2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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