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IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1

NRND
INFINEON

MOSFET, N-CH, 600V, 6.8A, TO-252

IPD60R1K0CEAUMA1

IPD60R1K0CEAUMA1

NRND
INFINEON

MOSFET, N-CH, 600V, 6.8A, TO-252

Description

General part information

IPD60R Series

N-Channel 600 V 6.8A (Tc) 61W (Tc) Surface Mount PG-TO252-3-344

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R1K0CEAUMA1
Current - Continuous Drain (Id) (Tc)6.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)13 nC
Input Capacitance (Ciss) (Max)280 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-344
Power Dissipation (Max)61 W
Rds On (Max)1 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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CAD

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