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INFINEON IPD60R600C6ATMA1

IPD60R600C6ATMA1

NRND
INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 600 MOHM;

INFINEON IPD60R600C6ATMA1

IPD60R600C6ATMA1

NRND
INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 600 MOHM;

Description

General part information

IPD60R Series

CoolMOS™ C6combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R600C6ATMA1
Current - Continuous Drain (Id) (Tc)7.3 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)20.5 nC
Input Capacitance (Ciss) (Max)440 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)63 W
Rds On (Max)600 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)3.5 V

Pricing

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