IPD60R380C6ATMA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM;

IPD60R380C6ATMA1

NRND

INFINEON

COOLMOS™ C6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM;

Description Specifications Series Pricing CAD Documents

Description

General part information

IPD60R Series

The IPD60R380C6 is a 600V N-channel CoolMOS™ Power MOSFET designed according to the Superjunction (SJ) principle with high class innovation. The C6 MOSFET provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. CoolMOS™ Superjunction power MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD60R380C6ATMA1

Current - Continuous Drain (Id) (Tc)	10.6 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	700 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	PG-TO252-3
Power Dissipation (Max)	83 W
Rds On (Max)	380 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPD60R Series

Part	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package Name	FET Type	Package / Case	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Mounting Type	Technology
INFINEON IPD60R1K0CEAUMA1	13 nC	280 pF	20 V	600 V	PG-TO252-3-344	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	1 Ohm	6.8 A	-40 °C	150 °C	61 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R600C6ATMA1	20.5 nC	440 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	600 mOhm	7.3 A	-55 °C	150 °C	63 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R520C6BTMA1	23.4 nC	512 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	520 mOhm	8.1 A	-55 °C	150 °C	66 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R380C6ATMA1	32 nC	700 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	380 mOhm	10.6 A	-55 °C	150 °C	83 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R3K3C6	4.6 nC	93 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	3.3 Ohm	1.7 A	-55 °C	150 °C	18.1 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R2K0PFD7SAUMA1	3.8 nC	134 pF	20 V	600 V	PG-TO252-3-344	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	10 V	2 Ohm	3 A	-40 °C	150 °C	20 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R1K0PFD7SAUMA1	6 nC	230 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4.5 V	10 V	1 Ohm	4.7 A	-40 °C	150 °C	26 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R280P7SE8228AUMA1	18 nC	761 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	10 V	280 mOhm	12 A	-40 °C	150 °C	53 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R2K1CEBTMA1	6.7 nC	140 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	2.1 Ohm	2.3 A	-40 °C	150 °C	22 W	Surface Mount	MOSFET (Metal Oxide)
INFINEON IPD60R950C6ATMA1	13 nC	280 pF	20 V	600 V	PG-TO252-3	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.5 V	10 V	950 mOhm	4.4 A	-55 °C	150 °C	37 W	Surface Mount	MOSFET (Metal Oxide)