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INFINEON IPD60R1K5PFD7SAUMA1

IPD60R280PFD7SAUMA1

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INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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INFINEON IPD60R1K5PFD7SAUMA1

IPD60R280PFD7SAUMA1

Active
INFINEON

COOLMOS™ PFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 280 MOHM; PRICE/PERFORMANCE

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Description

General part information

IPD60R Series

The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R280PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPD60R280PFD7S in a TO-252 DPAK package features RDS(on)of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R280PFD7SAUMA1
Current - Continuous Drain (Id) (Tc)12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)15.3 nC
Input Capacitance (Ciss) (Max)656 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-40 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3-344
Power Dissipation (Max)51 W
Rds On (Max)280 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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    IPD60R280PFD7SAUMA1 | INFINEON | Zenode.ai