Description
General part information
IPD60R Series
The 600V CoolMOS™ PFD7 superjunction MOSFET (IPD60R280PFD7S) complements theCoolMOS™7 offering for consumer applications. The IPD60R280PFD7S in a TO-252 DPAK package features RDS(on)of 280mOhm leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD package reduce PCB space and in turn the bill-of-material (BOM) the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD60R280PFD7SAUMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 12 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 15.3 nC |
| Input Capacitance (Ciss) (Max) | 656 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3-344 |
| Power Dissipation (Max) | 51 W |
| Rds On (Max) | 280 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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