Zenode.ai Logo
IPD60R380P6ATMA1

IPD60R380P6ATMA1

Active
INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM; PRICE/PERFORMANCE

Find alt
IPD60R380P6ATMA1

IPD60R380P6ATMA1

Active
INFINEON

COOLMOS™ P6 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; DPAK TO-252 PACKAGE; 380 MOHM; PRICE/PERFORMANCE

Find alt

Description

General part information

IPD60R Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD60R380P6ATMA1
Current - Continuous Drain (Id) (Tc)10.6 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)19 nC
Input Capacitance (Ciss) (Max)877 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NamePG-TO252-3
Power Dissipation (Max)83 W
Rds On (Max)380 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

    IPD60R380P6ATMA1 | INFINEON | Zenode.ai