| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Power transistors | 2 | 1 | The BUL1203E is manufactured using diffused collector in planar technology to enhance switching speeds and tight hFErange while maintaining a wide RBSOA. Thanks to his enhanced high voltage structure 1 (EHVS1) it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition,... Read More | |
STMicroelectronicsBUL128 | Bipolar (BJT) | 2 | 6 | |
STMicroelectronicsBUL138 | Single Bipolar Transistors | 1 | 8 | |
| Semiconductors - Discretes | 3 | 1 | The BUL216 is manufactured using high voltage Multiepitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. | |
STMicroelectronicsBUL310 | Transistors | 1 | 8 | |
| Discrete Semiconductor Products | 4 | 1 | The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. | |
| Discrete Semiconductor Products | 4 | 1 | The BUL38D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage withstand capability.
The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. | |
STMicroelectronicsBUL39 | Transistors | 1 | 8 | |
STMicroelectronicsBUL416 | Discrete Semiconductor Products | 2 | 8 | |
| Power transistors | 1 | 1 | The devices are manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. The devices are designed for use in electronic transformer for halogen lamps. | |