S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsBU806 | Bipolar (BJT) | 1 | 8 | |
STMicroelectronicsBU807 | Single | 1 | 8 | |
STMicroelectronicsBU931 | Single | 2 | 8 | |
STMicroelectronicsBU931PAutomotive-grade high voltage ignition coil driver NPN power Darlington transistor | Semiconductors - Discretes | 3 | 1 | This is a high voltage power Darlington transistor developed using multi-epitaxial planar technology. It has been properly designed for automotive environment as electronic ignition power actuators. |
STMicroelectronicsBU941 | Single | 4 | 6 | |
STMicroelectronicsBUF410 | Bipolar (BJT) | 1 | 8 | |
| Power transistors | 2 | 1 | The BUF420AW is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capacity. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUF series is designed for use in high-frequency power supplies and... Read More | |
| Semiconductors - Discretes | 3 | 1 | This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor... Read More | |
| Semiconductors - Discretes | 5 | 1 | This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor... Read More | |
STMicroelectronicsBUL1203 | Transistors | 1 | 8 | |