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STMicroelectronics
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Series | Category | # Parts | Status | Description |
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| Part | Spec A | Spec B | Spec C | Spec D | Description |
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| Part | Values | Type | Height [z] | Height [z] | Technology | Mounting Type | Package / Case | ESD Protection | Number of Channels [custom] | Filter Order | Resistance - Channel (Ohms) | Applications | Operating Temperature [Min] | Operating Temperature [Max] | Size / Dimension [x] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [y] | Peripherals | Core Processor | Program Memory Type | Speed | Voltage - Supply (Vcc/Vdd) [Max] | Voltage - Supply (Vcc/Vdd) [Min] | Core Size | Connectivity | Program Memory Size | Number of I/O | Supplier Device Package | Oscillator Type | Data Converters [custom] | Data Converters [custom] | RAM Size | Grade | Qualification | Utilized IC / Part | Supplied Contents | Board Type | Amplifier Type | Channels per IC | Voltage Dropout (Max) [Max] | Control Features | Voltage - Input (Max) [Max] | Current - Output | Number of Regulators | Current - Supply (Max) [Max] | Output Configuration | Protection Features | Output Type | PSRR [Max] | PSRR [Min] | For Use With/Related Products | Frequency [Max] | Frequency [Min] | Vgs (Max) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Fault Protection | Number of Outputs | Input Type | Output Type | Current - Output (Max) [Max] | Ratio - Input:Output [custom] | Switch Type | Voltage - Load | Rds On (Typ) | Interface | Voltage - Supply (Vcc/Vdd) |
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STMicroelectronics | 20 pF 40 Ohms | Low Pass | 0.026 in | 0.65 mm | RC (Pi) | Surface Mount | 24-WFBGA FCBGA | 9 | 2nd | 40 Ohms | General Purpose | -30 ░C | 85 °C | 0.076 in | 1.92 mm | 1.92 mm | 0.076 in | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 144-UFBGA | -40 °C | 105 °C | Brown-out Detect/Reset DMA I2S LCD POR PWM WDT | ARM® Cortex®-M4 | FLASH | 100 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG | 1 MB | 114 | 144-UFBGA (10x10) | Internal | 16 | 12 b | 256 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 32 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 256 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 16 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 64-LQFP | -40 °C | 105 °C | DMA LVD POR PWM WDT | e200z0h | FLASH | 48 MHz | 5.5 V | 3 V | 32-Bit Single-Core | CANbus LINbus SPI UART/USART | 128 KB | 45 | 64-LQFP (10x10) | Internal | 16 | 12 b | 12 K | Automotive | AEC-Q100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | 8-SOIC Package | Board(s) | Bare (Unpopulated) | General Purpose | 1 - Single | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 4-XFBGA FCBGA | -40 °C | 125 ¯C | 4-FlipChip (0.63x0.63) | 0.2 V | Enable | 5.5 V | 250 mA | 1 | 425 µA | Positive | Over Current Over Temperature Short Circuit Soft Start | 1.81 mOhm | 80 dB | 60 dB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | RFID Reader | Board(s) | ST25RU3993 | 960 MHz | 840 MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | 49-UFBGA WLCSP | -40 °C | 85 °C | Brown-out Detect/Reset DMA I2S POR PWM WDT | ARM® Cortex®-M4 | FLASH | 84 MHz | 3.6 V | 1.7 V | 32-Bit Single-Core | I2C IrDA LINbus SDIO SPI UART/USART USB OTG | 128 KB | 36 | 49-WLCSP | Internal | 64 K | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | MOSFET (Metal Oxide) | Through Hole | TO-220-3 | -55 °C | 150 °C | TO-220 | 25 V | N-Channel | 960 pF | 10 A | 4 V | 600 V | 90 W | 30.5 nC | 410 mOhm | 10 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | -40 °C | 150 °C | DPAK | Low Side | Current Limiting (Fixed) Over Temperature Over Voltage | 1 | Non-Inverting | N-Channel | 1.7 A | 1:1 | General Purpose | 36 V | 250 mOhm | On/Off |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTS3922 | Uncategorized | 1 | 1 | |
STMicroelectronicsSTS3D | Transistors | 1 | 8 | |
STMicroelectronicsSTS4D | FET, MOSFET Arrays | 3 | 8 | |
| FET, MOSFET Arrays | 1 | 1 | This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based pocess. The resulting transistor shows extremely high packing density fow low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. | |
STMicroelectronicsSTS5N15F4N-channel 150 V, 0.057 Ohm, 5 A, SO-8 STripFET(TM) DeepGATE(TM) Power MOSFET | Discrete Semiconductor Products | 1 | 1 | This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. |
STMicroelectronicsSTS5P3LLH6P-Channel 30 V, 0.048 Ohm typ., 5 A STripFET H6 Power MOSFET in SO-8 package | Discrete Semiconductor Products | 1 | 1 | This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STMicroelectronicsSTS6NF20VN-channel 20 V, 30 mOhm typ., 6 A, 2.7 V drive STripFET II Power MOSFET in an SO-8 package | Transistors | 1 | 1 | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving... Read More |
STMicroelectronicsSTS6P | FETs, MOSFETs | 1 | 8 | |
STMicroelectronicsSTS7P | Transistors | 1 | 8 | |
STMicroelectronicsSTS8DN6LF6AGAutomotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | Discrete Semiconductor Products | 1 | 1 | This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |