STS4D Series

Catalog

MOSFET 2N-CH 60V 4A 8SOIC

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs	Configuration	Mounting Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Drain to Source Voltage (Vdss)	Supplier Device Package	Technology	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
STMicroelectronics STS4DNF60	-55 °C	150 °C	Logic Level Gate	8-SOIC	3.9 mm	0.154 in	10 nC	2 N-Channel (Dual)	Surface Mount	4 V	90 mOhm	315 pF	4 A	2 W	60 V	8-SOIC	MOSFET (Metal Oxide)
STMicroelectronics STS4DNFS30	-55 °C	150 °C	Schottky Diode (Isolated)	8-SOIC	3.9 mm	0.154 in			Surface Mount	1 V	55 mOhm	330 pF	4.5 A		30 V	8-SOIC	MOSFET (Metal Oxide)	2 W	10 V	5 V	N-Channel	4.7 nC	20 V
STMicroelectronics STS4DPF30L	-55 °C	150 °C		8-SOIC	3.9 mm	0.154 in		2 P-Channel	Surface Mount	1 V	80 mOhm	1350 pF	4 A	2 W	30 V	8-SOIC	MOSFET (Metal Oxide)					16 nC