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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(2458)

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Part	Values	Type	Height [z]	Height [z]	Technology	Mounting Type	Package / Case	ESD Protection	Number of Channels [custom]	Filter Order	Resistance - Channel (Ohms)	Applications	Operating Temperature [Min]	Operating Temperature [Max]	Size / Dimension [x]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [y]	Peripherals	Core Processor	Program Memory Type	Speed	Voltage - Supply (Vcc/Vdd) [Max]	Voltage - Supply (Vcc/Vdd) [Min]	Core Size	Connectivity	Program Memory Size	Number of I/O	Supplier Device Package	Oscillator Type	Data Converters [custom]	Data Converters [custom]	RAM Size	Grade	Qualification	Utilized IC / Part	Supplied Contents	Board Type	Amplifier Type	Channels per IC	Voltage Dropout (Max) [Max]	Control Features	Voltage - Input (Max) [Max]	Current - Output	Number of Regulators	Current - Supply (Max) [Max]	Output Configuration	Protection Features	Output Type	PSRR [Max]	PSRR [Min]	For Use With/Related Products	Frequency [Max]	Frequency [Min]	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Fault Protection	Number of Outputs	Input Type	Output Type	Current - Output (Max) [Max]	Ratio - Input:Output [custom]	Switch Type	Voltage - Load	Rds On (Typ)	Interface	Voltage - Supply (Vcc/Vdd)
STMicroelectronics EMIF09-SD01F3	20 pF 40 Ohms	Low Pass	0.026 in	0.65 mm	RC (Pi)	Surface Mount	24-WFBGA FCBGA		9	2nd	40 Ohms	General Purpose	-30 ░C	85 °C	0.076 in	1.92 mm	1.92 mm	0.076 in
STMicroelectronics STM32F412ZGJ7						Surface Mount	144-UFBGA						-40 °C	105 °C					Brown-out Detect/Reset DMA I2S LCD POR PWM WDT	ARM® Cortex®-M4	FLASH	100 MHz	3.6 V	1.7 V	32-Bit Single-Core	CANbus EBI/EMI I2C IrDA LINbus MMC/SD/SDIO QSPI SPI UART/USART USB USB OTG	1 MB	114	144-UFBGA (10x10)	Internal	16	12 b	256 K
STMicroelectronics SPC560D40L1B3E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	32 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	256 KB	45	64-LQFP (10x10)	Internal	16	12 b	16 K	Automotive	AEC-Q100
STMicroelectronics SPC560D30L1B4E0X						Surface Mount	64-LQFP						-40 °C	105 °C					DMA LVD POR PWM WDT	e200z0h	FLASH	48 MHz	5.5 V	3 V	32-Bit Single-Core	CANbus LINbus SPI UART/USART	128 KB	45	64-LQFP (10x10)	Internal	16	12 b	12 K	Automotive	AEC-Q100
STMicroelectronics STEVAL-CCA036V1																																				8-SOIC Package	Board(s)	Bare (Unpopulated)	General Purpose	1 - Single
STMicroelectronics LDLN025J30R						Surface Mount	4-XFBGA FCBGA						-40 °C	125 ¯C															4-FlipChip (0.63x0.63)												0.2 V	Enable	5.5 V	250 mA	1	425 µA	Positive	Over Current Over Temperature Short Circuit Soft Start	1.81 mOhm	80 dB	60 dB
STMicroelectronics ST25RU3993-EVAL		RFID Reader																																			Board(s)															ST25RU3993	960 MHz	840 MHz
STMicroelectronics STM32F401CBY6TT						Surface Mount	49-UFBGA WLCSP						-40 °C	85 °C					Brown-out Detect/Reset DMA I2S POR PWM WDT	ARM® Cortex®-M4	FLASH	84 MHz	3.6 V	1.7 V	32-Bit Single-Core	I2C IrDA LINbus SDIO SPI UART/USART USB OTG	128 KB	36	49-WLCSP	Internal			64 K
STMicroelectronics STP12NM60N					MOSFET (Metal Oxide)	Through Hole	TO-220-3						-55 °C	150 °C															TO-220																										25 V	N-Channel	960 pF	10 A	4 V	600 V	90 W	30.5 nC	410 mOhm	10 V
STMicroelectronics VND1NV04						Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3						-40 °C	150 °C															DPAK																		Low Side																		Current Limiting (Fixed) Over Temperature Over Voltage	1	Non-Inverting	N-Channel	1.7 A	1:1	General Purpose	36 V	250 mOhm	On/Off

Series	Category	# Parts	Status	Description

STMicroelectronicsSG3524Voltage Mode PWM	Power Management (PMIC)	1	1	The SG3524 incorporates on a single monolithic chip all the function required for the construction of regulating power suppies inverters or switching regulators. They can also be used as the control element for high power-output applications. The SG3524 family was designed for switching regulators of either polarity, transformer-coupled dc-to-dc converters,... Read More
STMicroelectronicsSG3525Voltage Mode PWM	Voltage Regulators - DC DC Switching Controllers	2	1	The SG3525A series of pulse width modulator integrated circuits are designed to offer improved performance and lowered external parts count when used in designing all types of switching power supplies. The on-chip + 5.1 V reference is trimmed to ±1 % and the input common-mode range of the error amplifier... Read More
STMicroelectronicsSGT120R65AL650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor	Discrete Semiconductor Products	1	1	The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
STMicroelectronicsSGT65R65AL650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor	FETs, MOSFETs	1	1	The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
STMicroelectronicsSH32N65DM6AGAutomotive-grade N-channel 650 V, 89 mOhm typ., 32 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package	Transistors	1	1	This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high... Read More
STMicroelectronicsSH63N65DM6AGAutomotive-grade N-channel 650 V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET in an ACEPACK SMIT package	FET, MOSFET Arrays	1	1	This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high... Read More
STMicroelectronicsSH68N65DM6AGAutomotive-grade N-channel 650 V, 35 mOhm typ., 64 A MDmesh DM6 half-bridge topology Power MOSFET in an ACEPACK SMIT package	Discrete Semiconductor Products	1	1	This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high... Read More
STMicroelectronicsSLVU2.8Low Voltage Unit for Gigabit Ethernet protection	TVS	1	1	The SLVU2.8 series has been designed to protect Ethernet line. Its low capacitance makes it compatible with Gigabit Ethernet. SLVU2.8-4A1 is designed to be compatible with Gigabiit Ethernet and Gigabit PoE by using two SO-8 packages and can be used on 10/100 Mbps Ethernet by using a single device. SLVU2.8-8A1... Read More
STMicroelectronicsSM15T100A1500 W, 85.5 V TVS in SMC	Circuit Protection	1	1	The SM15T TVS series is designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical overstress such as IEC 61000-4-4 and 5. They are used for surges below 1500 W 10/1000 μs. This planar technology makes it compatible with high-end equipment... Read More
STMicroelectronicsSM15T12CAYAutomotive 1500 W, 10.2 V TVS in SMC	Circuit Protection	2	1	The SM15TY series are designed to protect sensitive automotive circuits against surges defined in ISO 7637-2 and against electrostatic discharges according to ISO 10605. The Planar technology makes it compatible with high-end circuits where low leakage current and high junction temperature are required to provide long term reliability and stability.