SGT120R65AL Series

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Catalog

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Part	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max) [Max]	Vgs (Max) [Min]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	FET Type	Power Dissipation (Max)
STMicroelectronics SGT120R65AL	8-PowerVDFN	2.6 V	6 V	-10 V	6 V	650 V	PowerFlat™ (5x6) HV	-55 °C	150 °C	15 A	120 mOhm	125 pF	GaNFET (Gallium Nitride)	3 nC	Surface Mount	N-Channel	192 W

Catalog

650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

Description

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.