Technical Specifications
Parameters and characteristics for this part
| Specification | SGT120R65AL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs | 120 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.95 | |
| 10 | $ 4.16 | |||
| 100 | $ 3.36 | |||
| 500 | $ 2.99 | |||
| 1000 | $ 2.56 | |||
| Digi-Reel® | 1 | $ 4.95 | ||
| 10 | $ 4.16 | |||
| 100 | $ 3.36 | |||
| 500 | $ 2.99 | |||
| 1000 | $ 2.56 | |||
| Tape & Reel (TR) | 3000 | $ 2.41 | ||
Description
General part information
SGT120R65AL Series
The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances.
Documents
Technical documentation and resources