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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTW31N65M5N-channel 650 V, 0.124 Ohm typ., 22 A MDmesh M5 Power MOSFET in TO-247 package | Single MOSFETs | 2 | 1 | These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency. |
STMicroelectronicsSTW32N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 3 | 1 | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW32NM50NN-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package | FETs, MOSFETs | 3 | 1 | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW33N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package | Semiconductors - Discretes | 4 | 1 | These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. |
STMicroelectronicsSTW33N60DM2N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package | Semiconductors - Discretes | 2 | 1 | These high voltage N-channel Power MOSFETs are part of the MDmesh DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STMicroelectronicsSTW33N60M2N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package | Semiconductors - Discretes | 4 | 1 | These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. |
STMicroelectronicsSTW33N60M6N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package | Semiconductors - Discretes | 2 | 1 | The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as... Read More |
STMicroelectronicsSTW34 | Power MOSFETs | 6 | 1 | |
STMicroelectronicsSTW34NM60NN-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package | Fet Transistors | 4 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTW35N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package | Power transistors | 3 | 1 | This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |