STW34NM60N Series

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

Catalog

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW34NM60N	10 V	29 A	250 W	Through Hole	TO-247-3	25 V	105 mOhm	MOSFET (Metal Oxide)	600 V	TO-247-3	150 °C	N-Channel	4 V	80 nC	2722 pF

Catalog

N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in TO-247 package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.